Southern University of Science and Technology (SUSTech) is a public university founded in the Shenzhen Special Economic Zone of China.
SUSTech offers an unparalleled learning and research experience at the scientific and technological frontiers.
SUSTech offers unprecedented opportunities for undergraduate and graduate students to work alongside the faculty to explore and tackle both fundamental and practical problems.
The Global Engagement Office (GEO) is responsible for forming and implementing a coherent strategy to promote the University’s international development and global profile.
The undergraduate admission of SUSTech adopts comprehensive evaluation enrollment mode based on national college entrance examination.The graduate admission of SUSTech currently adopts joint training mode.
The main duties of SUSTCEF is to accept the donations from the domestic and foreign associations, enterprises, trading companies and individuals, and establish the funding projects depending on the demands of the university and the wishes of the donors.
Ph.D., in Electrical Engineering, The University of Michigan, 2005
M.S., in Geochemistry, Stanford University, 1999
B.S., in Geochemistry,University of Science and Technology of China, 1997
Jan 2013 - present，Professor, Dept. of Materials Science and Engineering, South University of Science and Technology of China
Sept 2012 – Dec 2012, Associate Professor, Dept. of Electrical and Computer Engineering, Texas A&M University
Jan 2006 – Aug 2012, Assistant Professor, Dept. of Electrical and Computer Engineering, Texas A&M University
Feb 2005 – Dec 2005,Postdoctoral Research Associate, School of Electrical and Computer Engineering,Purdue University
Honors and Awards：
The 8th Recruitment Program of Global Experts (Young Scholar Program), Organization Department of the CCCPC,2012”
Young Faculty Award, Defense Advanced Research Projects Agency (DARPA), US Department of Defense, 2011
Faculty Early Career Development Award, US National Science Foundation, 2011
Micro- and nanostructures are the foundations of microelectronics and nanotechnology. We are interested in developing high-resolution, low-cost and high-throughput patterning techniques for the creation of ordered micro- and nanostructures. Particularly, we are interested in developing new concepts, schemes and equipment for advanced photolithography and nanoimprint techniques.
In the devices area, we work on the fabrication and characterization of novelelectronic and photonic devices, and solid-state sensors and actuators. In addition to traditional silicon and compound semiconductors, we are interested in integrating novel materials such as organic semiconductors and chalcogenidesin electronic and M/NEMS devices. However, many devices based on new materials suffer poor performance. For example, current organic transistors have low cutoff frequency and poor uniformity, which greatly limit their usefulness in circuit applications. We are working on using unconventional device architectures to circumvent performance-limiting factors.
Microelectronic and M/NEMS devices are particularly useful when they are integrated into complex systems. Integrated Macroelectronics (IM) are large-area integrated systems formed by two-dimensional arrays of microelectronic and M/NEMS devices and sensors on rigid or flexible substrates. Each element in the array is individually controlled and accessed by a passive-matrix or an active-matrix circuitry. Typical examples of IM include flat-panel displays and sensor arrays for X-ray and infrared imaging. By using different types of microelectronic sensors and M/NEMS transducers and actuators at each pixel, advanced applications such as digital biochip experimental platform and flexible artificial skin can be realized. We are interested in developing transformative IM systems through disruptive innovation for applications in flat-panel display, metrology and imaging, micro/nano fabrication, bioengineering and artificial skin.
1. Y. Jung and X. Cheng, “Dual-layer thermal nanoimprint lithography without dry etching”, Journal of Micromechanics and Microengineering, 22, 085011, 2012.
2. H. Kim and X. Cheng, “Gap Surface Plasmon Polaritons Enhanced by Plasmonic Lens”, Optics Letters, 36, 3082-3084, 2011.
3. T.-H. Lee, H.-J. Sue, and X. Cheng,"ZnO and conjugated polymer bulk heterojunction solar cells containing ZnO nanorod photoanode", Nanotechnology, 22, 285401, 2011.
4. H. Kim and X. Cheng, “Infrared Dipole Antenna Enhanced by Surface Phonon Polaritons”, Optics Letters, 35, 3748-3750,2010.
5. H. Kim and X. Cheng, "SERS-active substrate based on gap surface plasmon polaritons", Optics Express, Vol.17, pp. 17234-17241, 2009.
6. D. Cui, H Li, H. Park and X. Cheng,"Improving Organic Thin Film Transistor Performance by Nanoimprint-Induced Chain Ordering", Journal of Vacuum Science and Technology B, Vol. 26, pp.2404-2409, 2008.
7. H. Park, H. Li, and X. Cheng,"Optimizing Nanoimprint and Transfer-Bonding Techniques for Three-Dimensional Polymer Microstructures", Journal of Vacuum Science& Technology B, Vol. 25, pp. 2325-2328, 2007.
8. X. Cheng, D. Li, and L. J. Guo, "A Hybrid Mask-Mould Lithography Scheme and Its Application in Nanoscale Organic Thin Film Transistors", Nanotechnology, Vol. 17, pp. 927-32, 2006.
9. X. Cheng, L. J. Guo, and P. F. Fu,"Room-Temperature, Low-Pressure Nanoimprinting Based on Cationic Photopolymerization of Novel Epoxysilicone Monomers", Advanced Materials,Vol. 17, pp. 1419-1424, 2005.
10. L. J. Guo, X. Cheng, and C. F. Chou, "Fabrication of Size-Controllable Nanofluidic Channels by Nanoimprinting and Its Application for DNA Stretching", Nano Letters, Vol. 4, pp. 69-73,2004.